產品描述
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE8580 uses advanced trench technology and design to
provide excellent RDS(ON) with low gate charge. This device is
suitable for use in PWM, load switching and general purpose
applications.
GENERAL FEATURES
● VDS =85V,ID =80A
RDS(ON) < 8.5mΩ @ VGS=10V (Typ:6.8mΩ)
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Special designed for Convertors and power controls
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
產品圖片
圖 1
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