| 型號： | Sapphire wafer |
|---|---|
| 品牌： | 嘉安恆 |
| 原產地： | 中國 |
| 類別： | 電子、電力 / 其它電力、電子 |
| 標籤︰ | 藍寶石襯底 , 藍寶石晶片 , 藍寶石片北京 |
| 單價： |
-
|
| 最少訂量： | 1 件 |
| 最後上線︰2019/03/09 |
產品規格說明
藍寶石晶體廣氾應用於半導體（MOCVD氮化鎵外延襯底基板）、鐘錶、醫療、通訊、激光、紅外、電子、測量儀表、軍工及航空航天等諸多尖端高科技領域。
Crystal Materials
99,996% of Al2O3,High Purity, Monocrystalline, Al2O3
Crystal quality
Inclusions, block marks, twins, Color, micro-bubbles and dispersal centers are non-existent
Diameter
2inch
3inch
4inch
5inch ～ 7inch
50.8± 0.1mm
76.2±0.2mm
100±0.3mm
In accordance with the provisions of standard production
Thickness
430±15µm
550±15µm
650±20µm
In accordance with the provisions of standard production
330±15µm
500±15µm
550±20µm
250±15µm
430±15µm
500±20µm
Orientation
C- plane (0001) to M-plane (1-100) or A-plane(1 1-2 0) 0.2±0.1° /0.3±0.1°, R-plane (1-1 0 2), A-plane (1 1-2 0 ), M-plane(1-1 0 0), Any Orientation , Any angle
Primary flat length
16.0±0.8mm
22.0±1.0 mm
32.5±1.5 mm
In accordance with the provisions of standard production
Primary flat Orientation
A-plane (1 1-2 0 ) ± 0.2°
TTV
≤10µm
≤15µm
≤20µm
≤30µm
LTV
≤10µm
≤15µm
≤20µm
≤30µm
TIR
≤10µm
≤15µm
≤20µm
≤30µm
BOW
≤10µm
≤15µm
≤20µm
≤30µm
Warp
≤10µm
≤15µm
≤20µm
≤30µm
Front Surface
Epi-Polished (Ra< 0.2nm)
Back Surface
Fine ground (Ra=0.5 to 1.2 µm), Epi-Polished (Ra< 0.2nm)
Note
Can provide high-quality sapphire substrate wafer according to customers' specific requirement
