產品描述
EVG®810 LT
Features
- Surface plasma activation for low-temperature bonding (fusion/molecular and intermediate layer bonding)
- Fastest kinetics of any wafer bonding mechanism
- No wet processes required
- Highest bond strength at low temperature annealing (up to 400 °C)
- Applicable for SOI, MEMS, compound semiconductors, and advanced substrates bonding
- High degree of materials compatibility (including CMOS)
Technical Data
Wafer diameter (substrate size) |
50 - 200, 100 - 300 mm |
LowTemp™ plasma activation chamber |
Process gases: 2 standard process gases (N2 and O2) |
Universal mass flow controller: self-calibrating (up to 20.000 sccm) |
Vacuum system: 9x10-2 mbar |
Opening / closing of chamber: automated |
Loading / unloading of chamber: manual (wafer / substrate placed on loading pins) |
Optional features |
Chuck for different wafer sizes |
Metal ion-free activation |
Additional process gases with gas mixing |
High vacuum system with turbo pump: 9x10-3 mbar base pressure |
Material systems that are qualified with LowTemp™ plasma activated bonding |
Si: Si/Si, Si/Si (thermally oxidized, Si (thermally oxidized)/Si (thermally oxidized) |
TEOS/TEOS (thermally oxidized) |
Si/Ge for Germanium-on-Insulator (GeOI) |
Si/Si3N4 |
Glass (borofloat, non-alkali): Si/Glas, Glass/Glass |
Compound semiconductors: GaAs, GaP, InP |
Polymers: PMMA, Cyclo Olefin Polymers |
"Best Known Method" recipes available for users for the above and for other materials (full list available on request)
EVG®301
Features
- High-efficiency cleaning using 1 MHz megasonic nozzles or area transducers (option)
- Brush scrubbing for single-side cleaning (option)
- Diluted chemicals for wafer cleaning
- Prevents cross-contamination from back to front side
- Fully software controlled cleaning process
- Options
- Pre-bonding station with IR-inspection
- Tooling for non-SEMI standard substrates
echnical Data
Wafer diameter (substrate size) |
200, 100 - 300 mm |
Cleaning system |
Open chamber, spinner and cleaning arm |
Chamber: made of PP or PFA (option) |
Cleaning media: DI-water (standard), other cleaning media (option) |
Spinner chuck: vacuum chuck (standard) and edge handling chuck (option) made of metal ion free and clean materials |
Rotation: up to 3000 rpm (in 5 sec) |
Megasonic nozzle |
Frequency: 1 MHz (3 MHz option) |
Output power: 30 - 60 W |
DI-water flow rate: up to 1.5 liter/min |
Effective cleaning area: Ø 4.0 mm |
Material: PTFE |
Megasonic area transducer |
Frequency: 1 MHz (3 MHz option) |
Output power: max. 2.5 W/cm² active areas (max. output 200 W) |
DI-water flow rate: up to 1.5 liter/min |
Effective cleaning area: triangle shape that guarantees radio uniformity on whole wafers per each rotation |
Material: SS and sapphire |
Brush |
Material: PVA |
Programmable parameters: brush and wafer speed (rpm) |
Adjustable parameters (brush compression, media dispense) |
|
產品圖片
圖 1
圖 2
免責聲明:以上信息由企業自行提供,內容的真實性和合法性由發布企業負責。「自助貿易」對此不承擔任何保証責任。
舉報投訴:如發現違法和不良資訊,請
點此處舉報。